Electronic structure and kinetic phenomena

Watarai M, Nakamura J, Natori A, Band discontinuity at ultrathin SiO₂/Si(001) interfaces, PRB 69, 035312 (2004)

Brauer G, Anwand W, Skorupa W, Revesz A G, Kuriplach J, Characterization of the SiO₂/Si interface by positron annihilation spectroscopy, PRB 66, 195331 (2002)

Pierreux D, Stesmans A, Frequency-dependent electron spin resonance study of P_b-type interface defects in thermal Si/SiO₂, PRB 66, 165320 (2002)

Gerardi G J, Poindexter E H, Caplan P J, Johnson N M, Interface traps and P_b centers in oxidized (100) silicon wafers, APL 49, 348 (1986)

J Maserjian, N Zamani, Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling, JAP 53, 559 (1982)

Quantum well geometry

M H Evans, X G Zhang, J D Joannopoulos, S T Pantelides, First-Principles Mobility Calculations and Atomic-Scale Interface Roughness in Nanoscale Structures, PRL 95, 106802 (2005)

P Carrier, L J Lewis, M W C Dharma-Wardana, Optical properties of structurally-relaxed Si/SiO₂ superlattices: the role of bonding at interfaces, PRB 65, 165339 (2002)

Miscellaneous

Edwards A H, Schultz P A, Hjalmarson H P, Spontaneous ionization of hydrogen atoms at the Si-SiO₂ interface, PRB 69, 125318 (2004)

Electronic kinetic phenomena

Brocker D, Giebel T, Widdra W, Charge carrier dynamics at the SiO₂/Si(100) surface: a time-resolved photoemission study with combined laser and synchrotron radiation, CP 299, 247 (2004)

Scheidt T, Rohwer E G, von Bergmann H M, Charge-carrier dynamics and trap generation in native Si/SiO₂ interfaces probed by optical second-harmonic generation, PRB 69, 165314 (2004)