F Ersan, D Kecik, V O Ozcelik, Y Kadioglu, O Uzengi Akturk, E Durgun, E Akturk, S Ciraci, Two-dimensional pnictogens: A review of recent progresses and future research directions, APR 6, 021308 (2019)
F Xia, H Wang, J Hwang, A Neto, L Yang, Black phosphorus and its isoelectronic materials, NRP 1, 306 (2019)
O Degtyareva, M I McMahon, R J Nelmes, High-pressure structural studies of group-15 elements, High Pressure Research 24, 319 (2004)
N C Norman, Chemistry of arsenic, antimony and bismuth (Springer, 1998) – google
V Vasilchenko, S Levchenko, V Perebeinos, A Zhugayevych, Small Polarons in Two-Dimensional Pnictogens: A First-Principles Study, JPCL 12, 4674 (2021) – doi
L Cheng, C Zhang, Y Liu, The Optimal Electronic Structure for High-Mobility 2D Semiconductors: Exceptionally High Hole Mobility in 2D Antimony, JACS 141, 16296 (2019)
F Ersan, E Akturk, S Ciraci, Stable single-layer structure of group-V elements, PRB 94, 245417 (2016)
A Zdetsis, Theoretical predictions of a new family of stable bismuth and other group 15 fullerenes, JPCC 114, 10775 (2010)
H Katzke, P Toledano, Displacive mechanisms and order-parameter symmetries for the A7-incommensurate-bcc sequences of high-pressure reconstructive phase transitions in Group Va elements, PRB 77, 024109 (2008)
D Seo, R Hoffmann, What determines the structures of the group 15 elements?, J Solid State Chem 147, 26 (1999)
J Hafner, W Jank, Structural and electronic properties of the liquid polyvalent elements. IV. The pentavalent semimetals ans trends across the periodic table, PRB 45, 2739 (1992)
H M Polatoglou, Structural map for the crystals with an average of five valence electrons per atom, PRB 33, 5865 (1986)
H M Polatoglou, G Theodorou, N A Economou, Electronic properties of cubic crystals with an average of five valence electrons per atom, PRB 33, 1265 (1986)
E P O'Reilly, M J Kelly, A theoretical study of defects in amorphous group-V semiconductors, JPC 14, 3881 (1981)