N Margalit, C Xiang, S Bowers, A Bjorlin, R Blum, J Bowers, Perspective on the future of silicon photonics and electronics, APL 118, 220501 (2021)
R Keyes, Physical limits of silicon transistors and circuits, RPP 68, 2701 (2005)
B Monserrat, R Needs, Comparing electron-phonon coupling strength in diamond, silicon, and silicon carbide: First-principles study, PRB 89, 214304 (2014)
C Lortaraprasert, J Shiomi, Robust combined modeling of crystalline and amorphous silicon grain boundary conductance by machine learning, NCM 8, 219 (2022)
J Li, E Lampin, C Delerue, Y Niquet, Theoretical investigation of the phonon-limited carrier mobility in (001) Si films, JAP 120, 174301 (2016)
R Rhyner, M Luisier, Phonon-limited low-field mobility in silicon: Quantum transport vs. linearized Boltzmann Transport Equation, JAP 114, 223708 (2013)
E Pop, R Dutton, K Goodson, Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion, JAP 96, 4998 (2004)
C Schinke, P Christian Peest, J Schmidt, R Brendel, K Bothe, M Vogt, I Kroger, S Winter, A Schirmacher, S Lim, H Nguyen, D MacDonald, Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon, AIP Advances 5, 067168 (2015)
M Acciarri, C Cirelli, S Pizzini, S Binetti, A Castaldini, A Cavallini, Study of the correlation between radiative and non-radiative recombination channels in silicon, JPC 14, 13223 (2002)
E Chang, E Shirley, Ab initio calculation of KLV Auger spectra in Si, PRB 66, 035106 (2002)
H Tanimura, J Kanasaki, K Tanimura, J Sjakste, N Vast, Ultrafast relaxation dynamics of highly excited hot electrons in silicon, PRB 100, 035201 (2019)
M Bernardi, D Vigil-Fowler, J Lischner, J B Neaton, S G Louie, Ab Initio Study of Hot Carriers in the First Picosecond after Sunlight Absorption in Silicon, PRL 112, 257402 (2014)