Delerue C, Allan G, Reynaud C, Guillois O, Ledoux G, Huisken F, Multiexponential photoluminescence decay in indirect-gap semiconductor nanocrystals, PRB 73, 235318 (2006)
Trojanek F, Neudert K, Maly P, Dohnalova K, Pelant I, Ultrafast photoluminescence in silicon nanocrystals studied by femtosecond up-conversion technique, JAP 99, 116108 (2006)
Trojanek F, Neudert K, Bittner M, Maly P, Picosecond photoluminescence and transient absorption in silicon nanocrystals, PRB 72, 075365 (2005)
Smith A et al, Observation of strong direct-like oscillator strength in the photoluminescence of Si nanoparticles, PRB 72, 205307 (2005)
Guillois O et al, Photoluminescence decay dynamics of noninteracting silicon nanocrystals, JAP 95, 3677 (2004)
Dovrat M, Goshen Y, Jedrzejewski J, Balberg I, Saar A, Radiative versus nonradiative decay processes in silicon nanocrystals probed by time-resolved photoluminescence spectroscopy, PRB 69, 155311 (2004)
I V Blonskii, M S Brodyn, A Yu Vakhnin, A Zhugayevych, V M Kadan, A K Kadashchuk, Influence of structural inhomogeneity on the luminescence properties of silicon nanocrystallites, Low Temperature Physics 28, 706 (2002)
Саченко А В, Каганович Э Б, Манойлов Э Г, Свечников С В, Кинетика экситонной фотолюминесценции в низкоразмерных структурах кремния, ФТП 35, 1445 (2001)
Бондарев В Н, Пихица ПВ, Кинетика люминесценции пористого кремния: флуктуационный подход, ФТТ 43, 2142 (2001)
Chernoutsan K, Dneprovskii V, Shaligina O, Zhukov E, Time-resolved luminescence of porous Si and InP, PSSA 182, 347 (2000) – а може швидка компонента відповідає оточенню?
Агекян В Ф, Апрелев А М, Лайхо Р, Степанов Ю А, Воздействие контакта с воздухом на спектр фотолюминесценции пористого кремния, ФТТ 42, 1393 (2000) – strech.exp., clearly asympt. monoexp.
Агекян В Ф и др, Влияние γ-облучения на кинетику фотолюминесценции пористого кремния, ФТП 33, 1462 (1999)
Giorgis F, Pirri C F, Vinegoni C, Pavesi L, Luminescence processes in amorphous hydrogenated silicon-nutride nanometric multilayers, PRB 60, 11572 (1999)
Mihalcescu I, Vial J C, Romestain R, Absence of carrier hopping in porous silicon, PRL 80, 3392 (1998)
Linnros J, Galeckas A, Lalic N, Grivickas V, Time-resolved photoluminescence characterization of nm-sized silicon crystallites in SiO2, TSF 297, 167 (1997)
Kudrna J, Bartosek P, Trojanek F, Pelant I, Maly P, Time-resolved photoluminescence in porous silicon, J Lumin 72, 347 (1997)
Maly P, Trojanek F, Kudrna J, Hospodkova A, Banas S, Kohlova V, Valenta J, Pelant I, Picosecond and millisecond dynamics of photoexcited carriers in porous silicon, PRB 54, 7929 (1996)
Gaponenko S V, Petrov E P, Woggon U, Wind O, Klingshirn, Xie Y H, Germanenko I N, Stupak A P, Steady-state and time-resolved spectroscopy of porous silicon, J Lumin 70, 364 (1996)
Pavesi L, Influence of dispersive exciton motion on the recombination dynamics in porous silicon, JAP 80, 216 (1996)
Roman H E, Pavesi L, Monte Carlo simulations of the recombination dynamics in porous silicon, JPC 8, 5161 (1996) – co, re
Grivickas V, Linnros J, Free-carrier absorption and luminescence decay of porous silicon, TSF 255, 70 (1995)
Tessler L R, Alvarez F, Teschke O, Time resolved photoluminescence of porous silicon: Evidence for tunneling limited recombination in a band of localized states, APL 62, 2381 (1993)
Bustarret E, Mihalcescu I, Ligeon M, Romestain R, Vial J C, Madeore F, Comparison of room temperature photoluminescence decays in anodically oxidized crystalline and X-ray-amorphous porous silicon, J Lumin 57, 105 (1993)
Pavesi L, Ceschini M, Rossi F, Photoluminescence of porous silicon, J Lumin 57, 131 (1993)
Finkbeiner S, Weber J, Rosenbauer M, Stutzmann M, Transient photoluminescence decay in porous silicon and siloxene, J Lumin 57, 231 (1993)
Кашкаров П К и др, Фотолюминесценция ионов Er3+ в слоях квазиупорядоченных кремниевых нанокристаллитов в матрице диоксида кремния, ЖЭТФ 124, 1255 (2003)
Lebib S, von Bardeleben H J, Cernogora J , Fave J L, Roussel J, Time-resolved photoluminescence study of the red emission in nanoporous SiGe alloys, J Lumin 80, 153 (1999)